Lifetime estimation of InGaAlP lasers under different operating conditions

Yajun Li

doi:10.1117/12.613917

31 August 2005 Lifetime estimation of InGaAlP lasers under different operating conditions

Yajun Li

Proceedings Volume 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II; 58780Q (2005) https://doi.org/10.1117/12.613917
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

A model for low power (optical output power ≤10mW) InGaAlP lasers operating in the 650nm wavelength band is introduced. This model enables the user to predict lifetime of a diode laser under different operating conditions. Statistically meaningful data can be obtained from the model which gives quantitative values for the considerably increased laser lifetime when operating under less stress conditions.

Citation Download Citation

Yajun Li "Lifetime estimation of InGaAlP lasers under different operating conditions", Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58780Q (31 August 2005); https://doi.org/10.1117/12.613917

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