Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

P. J. Carrington; V. A. Solov'ev; Q. Zhuang; S. V. Ivanov; A. Krier

doi:10.1117/12.755465

1 February 2008 Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb₂ and As₂ fluxes

P. J. Carrington, V. A. Solov'ev, Q. Zhuang, S. V. Ivanov, A. Krier

Proceedings Volume 6900, Quantum Sensing and Nanophotonic Devices V; 69000I (2008) https://doi.org/10.1117/12.755465
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb₂ and As₂ fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T_Gr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb₂,As₂) and (Sb₄,As₄) is also presented.

Citation Download Citation

P. J. Carrington, V. A. Solov'ev, Q. Zhuang, S. V. Ivanov, and A. Krier "Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb₂ and As₂ fluxes", Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000I (1 February 2008); https://doi.org/10.1117/12.755465

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