Coherent coupling of mid-infrared quantum cascade lasers

L. K. Hoffmann; C. A. Hurni; S. Schartner; M. Austerer; E. Mujagić; M. Nobile; W. Schrenk; A. M. Andrews; P. Klang; M. P. Semtsiv; W. T. Masselink; G. Strasser

doi:10.1117/12.773352

29 January 2008 Coherent coupling of mid-infrared quantum cascade lasers

L. K. Hoffmann, C. A. Hurni, S. Schartner, M. Austerer, E. Mujagić, M. Nobile, W. Schrenk, A. M. Andrews, P. Klang, M. P. Semtsiv, W. T. Masselink, G. Strasser

Author Affiliations +

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 690916 (2008) https://doi.org/10.1117/12.773352
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

A monolithic coupling scheme in which two active waveguides merge into a single waveguide to form a Y-shaped resonator is demonstrated for mid-infrared quantum cascade lasers. Lasers with emission wavelengths of 10.5 μm and 4.2 μm were processed from lattice-matched GaAs/AlGaAs and strain-compensated InP/InGaAs/AlAs/AlInAs structures. Phase-locking is observed in the laser cavities, resulting in coherent interference of the emitted radiation. Far fields were recorded on both sides of the devices and analyzed in respect to their radiative origin. By matching the recorded far field intensity profiles to corresponding near field distributions, the lateral mode distribution within the resonator is derived. Depending on the length of the coupling section, even or odd cavity modes evolve. Moreover, a comparison between the fabricated devices shows the emission wavelength's impact on the coupling performance of the Y-junction. The results demonstrate the feasibility of coherent laser resonators with prospective applications in interferometric sensing and high power laser arrays.

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L. K. Hoffmann, C. A. Hurni, S. Schartner, M. Austerer, E. Mujagić, M. Nobile, W. Schrenk, A. M. Andrews, P. Klang, M. P. Semtsiv, W. T. Masselink, and G. Strasser "Coherent coupling of mid-infrared quantum cascade lasers", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 690916 (29 January 2008); https://doi.org/10.1117/12.773352

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