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Proceedings Article

High-power InGaN LEDs: present status and future prospects

[+] Author Affiliations
B. Hahn, A. Weimar, M. Peter, J. Baur

OSRAM Opto Semiconductors (Germany)

Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 691004 (February 12, 2008); doi:10.1117/12.767255
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From Conference Volume 6910

  • Light-Emitting Diodes: Research, Manufacturing, and Applications XII
  • Klaus P. Streubel; Heonsu Jeon
  • San Jose, CA | January 19, 2008

abstract

The ThinGaN® technology of OSRAM Opto semiconductors enables high power LEDs with wall plug efficiencies of currently up to 50%, enabling efficacies of > 100lm/W for white and green LEDs. The good scalability of the technology enables devices which deliver high luminous flux. The future limitations regarding efficacy of white LED can be estimated to be 150lm/W for high color rendering. Besides efficiency long term stability and high temperature capability are requirements for market adoption

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

B. Hahn ; A. Weimar ; M. Peter and J. Baur
"High-power InGaN LEDs: present status and future prospects", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 691004 (February 12, 2008); doi:10.1117/12.767255; http://dx.doi.org/10.1117/12.767255


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