Paper
18 November 2008 Tilted cavity concept for the high-power wavelength stabilized diode lasers
L. Ya. Karachinsky, I. I. Novikov, G. Fiol, M. Kuntz, Yu. M. Shernyakov, N. Yu. Gordeev, M. V. Maximov, M. B. Lifshits, T. Kettler, K. Posilovic, V. A. Shchukin, N. N. Ledentsov, S. S. Mikhrin, D. Bimberg
Author Affiliations +
Proceedings Volume 7138, Photonics, Devices, and Systems IV; 713804 (2008) https://doi.org/10.1117/12.817968
Event: Photonics, Devices, and Systems IV, 2008, Prague, Czech Republic
Abstract
We discuss wavelength stabilized all-epitaxial Tilted Cavity Lasers (TCLs). Optical cavity of a TCL favors propagation of only one tilted optical mode ensuring wavelength-selective operation. The possibility of full control of the thermal shift of the lasing wavelength d λ/dT in TCL including positive, zero or negative shift, is proved theoretically. Broad-area (100 μm) 970-nm-range devices have been fabricated showing a high temperature stability of the lasing wavelength (0.13 nm/K), a high power operation (> 7 W in pulsed mode and > 1.5 W in continuous wave (cw) mode), and a narrow vertical far-field beam divergence (FWHM ~ 20°). Single transverse mode edge-emitting 4 μm-wide-ridge TCLs demonstrated high-power spatial and spectral single mode cw operation with a longitudinal side mode suppression ratio (SMSR) up to 41.3 dB at 93 mW output power. Such a result is similar to the best values achieved for DFB lasers in the same spectral range, while no etching and overgrowth is used in present case.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Ya. Karachinsky, I. I. Novikov, G. Fiol, M. Kuntz, Yu. M. Shernyakov, N. Yu. Gordeev, M. V. Maximov, M. B. Lifshits, T. Kettler, K. Posilovic, V. A. Shchukin, N. N. Ledentsov, S. S. Mikhrin, and D. Bimberg "Tilted cavity concept for the high-power wavelength stabilized diode lasers", Proc. SPIE 7138, Photonics, Devices, and Systems IV, 713804 (18 November 2008); https://doi.org/10.1117/12.817968
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KEYWORDS
Pulsed laser operation

Continuous wave operation

Semiconductor lasers

Modulation

High power lasers

Reflectivity

Gallium arsenide

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