The impact of gate line edge roughness (LER) on the performance variability of 32nm double-gate (DG) FinFETs is investigated using a framework that links device performance to commonly used LER descriptors, namely correlation length (ξ), RMS amplitude or standard deviation (σ) of the line edge from its mean value, and roughness exponent (α). This modeling approach is more efficient than Monte-Carlo TCAD simulations, and provides comparable results with appropriately selected input parameters. The FinFET device architecture is found to be robust to gate LER effects. Additionally, a spacer-defined gate electrode provides for dramatically reduced variability in device performance compared to a resist-defined gate electrode, which indicates that gate-length mismatch contributes more to variability in performance than lateral offset between the front and the back gate.© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.