OPS laser EPI design for different wavelengths

J. V. Moloney; J. Hader; H. Li; Y. Kaneda; T. S. Wang; M. Yarborough; S. W. Koch; W. Stolz; B. Kunert; C. Bueckers; S. Chaterjee; G. Hardesty

doi:10.1117/12.814934

27 February 2009 OPS laser EPI design for different wavelengths

J. V. Moloney, J. Hader, H. Li, Y. Kaneda, T. S. Wang, M. Yarborough, S. W. Koch, W. Stolz, B. Kunert, C. Bueckers, S. Chaterjee, G. Hardesty

Author Affiliations +

Proceedings Volume 7193, Solid State Lasers XVIII: Technology and Devices; 719313 (2009) https://doi.org/10.1117/12.814934
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States

Abstract

Design of optimized semiconductor optically-pumped semiconductor lasers (OPSLs) depends on many ingredients starting from the quantum wells, barrier and cladding layers all the way through to the resonant-periodic gain (RPG) and high reflectivity Bragg mirror (DBR) making up the OPSL active mirror. Accurate growth of the individual layers making up the RPG region is critical if performance degradation due to cavity misalignment is to be avoided. Optimization of the RPG+DBR structure requires knowledge of the heat generation and heating sinking of the active mirror. Nonlinear Control Strategies SimuLase^TM software, based on rigorous many-body calculations of the semiconductor optical response, allows for quantum well and barrier optimization by correlating low intensity photoluminescence spectra computed for the design, with direct experimentally measured wafer-level edge and surface PL spectra. Consequently, an OPSL device optimization procedure ideally requires a direct iterative interaction between designer and grower. In this article, we discuss the application of the many-body microscopic approach to OPSL devices lasing at 850nm, 1040nm and 2μm. The latter device involves and application of the many-body approach to mid-IR OPSLs based on antimonide materials. Finally we will present results on based on structural modifications of the epitaxial structure and/or novel material combinations that offer the potential to extend OPSL technology to new wavelength ranges.

Citation Download Citation

J. V. Moloney, J. Hader, H. Li, Y. Kaneda, T. S. Wang, M. Yarborough, S. W. Koch, W. Stolz, B. Kunert, C. Bueckers, S. Chaterjee, and G. Hardesty "OPS laser EPI design for different wavelengths", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719313 (27 February 2009); https://doi.org/10.1117/12.814934

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