Paper
11 March 2008 Effect of heat treatment on the property of CuInS2 thin film prepared by chemical bath deposition
Fangming Cui, Lei Wang, Xiongfei Chen, Xia Sheng, Deren Yang, Yun Sun
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841A (2008) https://doi.org/10.1117/12.792396
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Uncrystallized copper indium disulphide (CuInS2) thin films have been deposited on ITO glass by chemical bath deposition (CBD) in acid conditions. Then polycrystalline CuInS2 films were obtained after sulfuration in sulfur atmosphere at 300°C, 350°C, 400°C and 450°C for 1.5 hours respectively. The films have been characterized by X-Ray diffraction (XRD), scanning electronic microscopy (SEM), precision surface profiler, energy dispersive X-ray analysis (EDX) and Hall effect measurement system. The results show that with the raising of heat treatment temperature the crystal degree and electrical property of the film are improved. Our work demonstrates the chemical bath deposition in acid conditions is a promising method for deposition of CuInS2 thin films for solar cells.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fangming Cui, Lei Wang, Xiongfei Chen, Xia Sheng, Deren Yang, and Yun Sun "Effect of heat treatment on the property of CuInS2 thin film prepared by chemical bath deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841A (11 March 2008); https://doi.org/10.1117/12.792396
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KEYWORDS
Copper indium disulfide

Thin films

Crystals

Heat treatments

Sulfur

Copper

Scanning electron microscopy

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