Paper
11 March 2008 Characteristic of ZnO films prepared by the sol-gel process
Guannan He, Bo Huang, Suntao Wu, Jing Li
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842E (2008) https://doi.org/10.1117/12.792117
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
ZnO thin films with or without Al doping were grown on the glass substrates by sol-gel method and subsequently annealing treatments at high temperatures were performed to optimize films' morphologies and properties. The crystal structures of ZnO films were characterized by X-ray diffraction (XRD), and XRD spectra show a shift of (002) diffraction peak to the higher 2θ values with changing the Al-doping concentration. Optical transmittance spectrums exhibit a sharp absorption edge at around 380nm undergoing a blue shift induced by aluminum doping. An apparent particle size decreasing was displayed by scanning electron microscopy (SEM) images with the Al-doping concentration increasing.
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Guannan He, Bo Huang, Suntao Wu, and Jing Li "Characteristic of ZnO films prepared by the sol-gel process", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842E (11 March 2008); https://doi.org/10.1117/12.792117
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KEYWORDS
Zinc oxide

Aluminum

Thin films

Doping

Sol-gels

Absorption

Crystals

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