Paper
23 February 2009 Fault protection of broad-area laser diodes
J. H. Jacob, R. Petr, M. A. Jaspan, S. D. Swartz, M. T. Knapczyk, A. M. Flusberg, A. K. Chin, I. Smilanski
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Abstract
Detailed reliability studies of high-power, CW, broad-area, GaAs-based laser- diodes were performed. Optical and electrical transients occurring prior to device failure by catastrophic optical-damage (COD) were observed. These transients were correlated with COD formation as observed in laser diodes with an optical window in the n-side electrode. In addition, custom electronics were designed to fault-protect the laser diodes during aging tests, i.e. each time a transient (fault) was detected, the operating current was temporarily cut off within 4μs of fault detection. The lifetime of fault-protected 808-nm laser-diode bars operated at a constant current of 120A (~130W) and 35°C exceeded similar unprotected devices by factors of 2.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. H. Jacob, R. Petr, M. A. Jaspan, S. D. Swartz, M. T. Knapczyk, A. M. Flusberg, A. K. Chin, and I. Smilanski "Fault protection of broad-area laser diodes", Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 719815 (23 February 2009); https://doi.org/10.1117/12.807717
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Cited by 15 scholarly publications.
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KEYWORDS
Semiconductor lasers

Near field optics

Optical resonators

Active optics

Optics manufacturing

Diodes

Electronics

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