High speed all optical logic gates based on InAs/GaAs quantum-dot semiconductor optical amplifiers

Shaozhen Ma; Zhe Chen; Hongzhi Sun; Niloy K. Dutta

doi:10.1117/12.802589

24 February 2009 High speed all optical logic gates based on InAs/GaAs quantum-dot semiconductor optical amplifiers

Shaozhen Ma, Zhe Chen, Hongzhi Sun, Niloy K. Dutta

Proceedings Volume 7211, Physics and Simulation of Optoelectronic Devices XVII; 72110P (2009) https://doi.org/10.1117/12.802589
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

A scheme to realize fiber-based all-optical Boolean logic functions including XOR, AND, OR and NOT based on a semiconductor optical amplifier with a closely stacked Stranski-Krastanow InAs/GaAs quantum dot layers is proposed. Rate equations is given to describe the population dynamics of the carrier in the device, as well as the nonlinear dynamics including carrier heating and spectral hole-burning. The model is used to simulated the cross gain and cross phase modulation in the device that are related to the logic processes. Results show with QD excited state serving as a carrier reservoir, this type of QD device is suitable for high speed operations with ultra fast carrier and phase relaxation. All optical logic operation can be carried out at up to 250 Gb/s.

Citation Download Citation

Shaozhen Ma, Zhe Chen, Hongzhi Sun, and Niloy K. Dutta "High speed all optical logic gates based on InAs/GaAs quantum-dot semiconductor optical amplifiers", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110P (24 February 2009); https://doi.org/10.1117/12.802589

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