Small signal analysis of four-wave mixing in InAs/GaAs quantum-dot semiconductor optical amplifiers

Shaozhen Ma; Zhe Chen; Niloy K. Dutta

doi:10.1117/12.808320

24 February 2009 Small signal analysis of four-wave mixing in InAs/GaAs quantum-dot semiconductor optical amplifiers

Shaozhen Ma, Zhe Chen, Niloy K. Dutta

Proceedings Volume 7211, Physics and Simulation of Optoelectronic Devices XVII; 721110 (2009) https://doi.org/10.1117/12.808320
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

A model to study four-wave mixing (FWM) wavelength conversion in InAs-GaAs quantum-dot semiconductor optical amplifier is proposed. Rate equations involving two QD states are solved to simulate the carrier density modulation in the system, results show that the existence of QD excited state contributes to the ultra fast recover time for single pulse response by serving as a carrier reservoir for the QD ground state, its speed limitations are also studied. Nondegenerate four-wave mixing process with small intensity modulation probe signal injected is simulated using this model, a set of coupled wave equations describing the evolution of all frequency components in the active region of QD-SOA are derived and solved numerically. Results show that better FWM conversion efficiency can be obtained compared with the regular bulk SOA, and the four-wave mixing bandwidth can exceed 1.5 THz when the detuning between pump and probe lights is 0.5 nm.

Citation Download Citation

Shaozhen Ma, Zhe Chen, and Niloy K. Dutta "Small signal analysis of four-wave mixing in InAs/GaAs quantum-dot semiconductor optical amplifiers", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 721110 (24 February 2009); https://doi.org/10.1117/12.808320

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KEYWORDS

Four wave mixing

Semiconductor optical amplifiers

Modulation

Picosecond phenomena

Electronic support measures

Global system for mobile communications

Signal processing

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