Optical and x-ray characterization of two novel CMOS image sensors

Sarah E. Bohndiek; Costas D. Arvanitis; Cristian Venanzi; Gary J. Royle; Andy T. Clark; Jamie P. Crooks; Mark L. Prydderch; Renato Turchetta; Andrew Blue; Robert D. Speller

doi:10.1117/12.700581

9 February 2007 Optical and x-ray characterization of two novel CMOS image sensors

Sarah E. Bohndiek, Costas D. Arvanitis, Cristian Venanzi, Gary J. Royle, Andy T. Clark, Jamie P. Crooks, Mark L. Prydderch, Renato Turchetta, Andrew Blue, Robert D. Speller

Author Affiliations +

Proceedings Volume 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV; 647113 (2007) https://doi.org/10.1117/12.700581
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

A UK consortium (MI3) has been founded to develop advanced CMOS pixel designs for scientific applications. Vanilla, a 520x520 array of 25&mgr;m pixels benefits from flushed reset circuitry for low noise and random pixel access for region of interest (ROI) readout. OPIC, a 64x72 test structure array of 30&mgr;m digital pixels has thresholding capabilities for sparse readout at 3,700fps. Characterization is performed with both optical illumination and x-ray exposure via a scintillator. Vanilla exhibits 34±3e^- read noise, interactive quantum efficiency of 54% at 500nm and can read a 6x6 ROI at 24,395fps. OPIC has 46±3e^- read noise and a wide dynamic range of 65dB due to high full well capacity. Based on these characterization studies, Vanilla could be utilized in applications where demands include high spectral response and high speed region of interest readout while OPIC could be used for high speed, high dynamic range imaging.

Citation Download Citation

Sarah E. Bohndiek, Costas D. Arvanitis, Cristian Venanzi, Gary J. Royle, Andy T. Clark, Jamie P. Crooks, Mark L. Prydderch, Renato Turchetta, Andrew Blue, and Robert D. Speller "Optical and x-ray characterization of two novel CMOS image sensors", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 647113 (9 February 2007); https://doi.org/10.1117/12.700581

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