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Proceedings Article

InGaN/GaN nanocolumn LEDs emitting from blue to red

[+] Author Affiliations
K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa

Sophia Univ. (Japan) and Japan Science and Technology Agency (Japan)

Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730T (February 08, 2007); doi:10.1117/12.695168
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From Conference Volume 6473

  • Gallium Nitride Materials and Devices II
  • Hadis Morkoc; Cole W. Litton
  • San Jose, CA | January 20, 2007

abstract

Self-assembled GaN nanocolumns were grown on sapphire and Si substrates by rf-plasma-assisted molecular-beam-epitaxy, clarifying the growth condition. The nanocolumn crystal showed a highly efficient photoluminescence (PL) emission at the room temperature, which intensity was 4 times stronger than that of a high-quality GaN substrate. InGaN/GaN quantum-disk nanocolumn LEDs were fabricated on n-type (111) Si substrates. For a macroscopic emission area of 500-μm-diameter, a broad electro-luminescence (EL) emission spectrum extending from the blue to the red region was observed. Microscopic EL measurement was performed for a 3-μm-diameter detection area, demonstrating a drastic spectral narrowing. In the microscopic EL spectrum, no blue shift of the emission wavelength was observed when the injection current increased. This suggests that the carrier localization or/and the piezo-electric field is minimized in nanocolumns. Selective growth of GaN nanocolumns was performed by use of patterned pre-deposited Al layers.

© (2007) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

K. Kishino ; A. Kikuchi ; H. Sekiguchi and S. Ishizawa
"InGaN/GaN nanocolumn LEDs emitting from blue to red", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730T (February 08, 2007); doi:10.1117/12.695168; http://dx.doi.org/10.1117/12.695168


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