A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dots

Xuejun Lu; Mark Meisner

doi:10.1117/12.711001

6 February 2007 A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dots

Xuejun Lu, Mark Meisner

Author Affiliations +

Proceedings Volume 6481, Quantum Dots, Particles, and Nanoclusters IV; 64810K (2007) https://doi.org/10.1117/12.711001
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dot (QD) is proposed and analyzed. Enhanced nonlinear absorption is expected due to the long excited sate lifetime. Ultra-low leakage current has been verified. A High photodetectivity of > 10¹¹cmHz^1/2/W can be obtained at 180K. The two-photon sequential absorption photocurrent generation process is promising to achieve thermal-electrically cooled long-wave infrared (LWIR 8-12μm) photodetector with high photodetectivity.

Citation Download Citation

Xuejun Lu and Mark Meisner "A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dots", Proc. SPIE 6481, Quantum Dots, Particles, and Nanoclusters IV, 64810K (6 February 2007); https://doi.org/10.1117/12.711001

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