1.3 µm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

Ph. Gilet; E. Pougeoise; L. Grenouillet; Ph. Grosse; N. Olivier; S. Poncet; A. Chelnokov; J. M. Gérard; R. Stevens; R. Hamelin; M. Hammar; J. Berggren; P. Sundgren

doi:10.1117/12.700403

23 February 2007 1.3 &mgr;m VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

Ph. Gilet, E. Pougeoise, L. Grenouillet, Ph. Grosse, N. Olivier, S. Poncet, A. Chelnokov, J. M. Gérard, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Author Affiliations +

Proceedings Volume 6484, Vertical-Cavity Surface-Emitting Lasers XI; 64840F (2007) https://doi.org/10.1117/12.700403
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

In this article, we report our results on 1.3&mgr;m VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GaInNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain fully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 (micron)m to 16 (micron)m diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1- 10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

Citation Download Citation

Ph. Gilet, E. Pougeoise, L. Grenouillet, Ph. Grosse, N. Olivier, S. Poncet, A. Chelnokov, J. M. Gérard, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, and P. Sundgren "1.3 &mgr;m VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material", Proc. SPIE 6484, Vertical-Cavity Surface-Emitting Lasers XI, 64840F (23 February 2007); https://doi.org/10.1117/12.700403

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available