Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3µm

Julie Angellier; David Barat; Guilhem Boissier; France Chevier; Pierre Grech; Yves Rouillard

doi:10.1117/12.698151

8 February 2007 Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3 &mgr;m

Julie Angellier, David Barat, Guilhem Boissier, France Chevier, Pierre Grech, Yves Rouillard

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 64850B (2007) https://doi.org/10.1117/12.698151
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We have made quantum wells laser diodes by Molecular Beam Epitaxy with emission wavelengths from 2.3 &mgr;m to 3.1 &mgr;m. With growing wavelength, threshold current densities increase almost exponentially. We obtained threshold values as low as 65 A/cm² at 2.3 &mgr;m and 156 A/cm² at 2.62 &mgr;m. At the same time, the valence-band offset decrease from 132 meV (at 2.3 &mgr;m) to 78 meV (at 2.6 &mgr;m). A threshold current density study shows that Auger effect is not the only responsible for the augmentation of J_th. The reduction of internal efficiency η_i has a greater impact on the increase of Jth. The diminution of the holes confinement is incriminated for the degradation of η_i with growing wavelength. Therefore, to improve Jth at higher wavelengths another kind of barrier has to be utilized (for example, thanks to the use of the quinary material AlGaInAsSb).

Citation Download Citation

Julie Angellier, David Barat, Guilhem Boissier, France Chevier, Pierre Grech, and Yves Rouillard "Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3 &mgr;m", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850B (8 February 2007); https://doi.org/10.1117/12.698151

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