High-power operation of inner-stripe GaN-based blue-violet laser diodes

Masaki Ohya; Kazuhisa Fukuda; Ichiro Masumoto; Shigeru Kohmoto; Koichi Naniwae; Mitsuki Yamada; Masahige Matsudate; Takumi Tsukuda; Takeshi Akagawa; Chiaki Sasaoka

doi:10.1117/12.714209

8 February 2007 High-power operation of inner-stripe GaN-based blue-violet laser diodes

Masaki Ohya, Kazuhisa Fukuda, Ichiro Masumoto, Shigeru Kohmoto, Koichi Naniwae, Mitsuki Yamada, Masahige Matsudate, Takumi Tsukuda, Takeshi Akagawa, Chiaki Sasaoka

Author Affiliations +

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 648505 (2007) https://doi.org/10.1117/12.714209
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We review our recent progress in novel planar blue-violet laser diodes (BV-LDs). The planar BV-LDs are characterized by an inner-stripe waveguide formed with a buried AlN current-blocking layer and a wide regrown cladding layer that also acts as a current and heat spreader. These features enable high-power operation for BV-LDs thanks to their low electrical and low thermal resistance even with a narrow-stripe waveguide. In this paper, we report successful demonstration of the planar inner-stripe BV-LDs by utilizing low-temperature-grown AlN and the regrown cladding layer. Low electrical resistance of the regrown cladding layer was confirmed by scanning spread resistance microscopy. Heat spreading characteristics were also investigated by 2-dimensional thermal simulation. The fabricated BV-LDs with a 1.4-&mgr;m-wide stripe achieved a low threshold current of 32 mA, a low threshold voltage of 4.1 V and greater than 200- mW kink-free output power under CW operation. Moreover, the kink-free output level surpassed 1,000 mW for the 1.0- &mgr;m stripe BV-LDs under 0.03%-duty-pulsed operation. The BV-LDs operated stably for more than 1,000 hours at a high output power of 200 mW at 80oC under a 50%-duty-pulsed condition. After the reliability test, transmission electron microscopy revealed no defect near the regrown interface of the tested LDs.

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Masaki Ohya, Kazuhisa Fukuda, Ichiro Masumoto, Shigeru Kohmoto, Koichi Naniwae, Mitsuki Yamada, Masahige Matsudate, Takumi Tsukuda, Takeshi Akagawa, and Chiaki Sasaoka "High-power operation of inner-stripe GaN-based blue-violet laser diodes", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648505 (8 February 2007); https://doi.org/10.1117/12.714209

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