Stability and imaging of the ASML EUV alpha demo tool

Jan V. Hermans; Bart Baudemprez; Gian Lorusso; Eric Hendrickx; Andre van Dijk; Rik Jonckheere; Anne-Marie Goethals

doi:10.1117/12.814484

17 March 2009 Stability and imaging of the ASML EUV alpha demo tool

Jan V. Hermans, Bart Baudemprez, Gian Lorusso, Eric Hendrickx, Andre van Dijk, Rik Jonckheere, Anne-Marie Goethals

Proceedings Volume 7271, Alternative Lithographic Technologies; 72710T (2009) https://doi.org/10.1117/12.814484
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Extreme Ultra-Violet (EUV) lithography is the leading candidate for semiconductor manufacturing of the 22nm technology node and beyond, due to the very short wavelength of 13.5nm. However, reducing the wavelength adds complexity to the lithographic process. The impact of the EUV specific conditions on lithographic performance needs to be understood, before bringing EUV lithography into pre-production. To provide early learning on EUV, an EUV fullfield scanner, the Alpha Demo Tool (ADT) from ASML was installed at IMEC, using a Numerical Aperture (NA) of 0.25. In this paper we report on different aspects of the ADT: the imaging and overlay performance and both short and long-term stability. For 40nm dense Lines-Spaces (LS), the ADT shows an across field overlapping process window of 270nm Depth Of Focus (DOF) at 10% Exposure Latitude (EL) and a wafer CD Uniformity (CDU) of 3nm 3σ, without any corrections for process or reticle. The wafer CDU is correlated to different factors that are known to influence the CD fingerprint from traditional lithography: slit intensity uniformity, focus plane deviation and reticle CD error. Taking these contributions into account, the CD through slit fingerprint for 40nm LS is simulated with excellent agreement to experimental data. The ADT shows good CD stability over 9 months of operation, both intrafield and across wafer. The projection optics reflectivity has not degraded over 9 months. Measured overlay performance with respect to a dry tool shows |Mean|+3σ below 20nm with more correction potential by applying field-by-field corrections (|Mean|+3σ ≤10nm). For 22nm SRAM application, both contact hole and metal layer were printed in EUV with 10% CD and 15nm overlay control. Below 40nm, the ADT shows good wafer CDU for 30nm dense and isolated lines (on the same wafer) and 38nm dense Contact Holes (CH). First 28nm dense line CDU data are achieved. The results indicate that the ADT can be used effectively for EUV process development before installation of the pre-production tool, the ASML NXE Gen. 1 at IMEC.

Citation Download Citation

Jan V. Hermans, Bart Baudemprez, Gian Lorusso, Eric Hendrickx, Andre van Dijk, Rik Jonckheere, and Anne-Marie Goethals "Stability and imaging of the ASML EUV alpha demo tool", Proc. SPIE 7271, Alternative Lithographic Technologies, 72710T (17 March 2009); https://doi.org/10.1117/12.814484

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