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Proceedings Article

DUV-assisted e-beam resist process

[+] Author Affiliations
Wei-Su Chen, Ming-Jinn Tsai

Industrial Technology Research Institute (Taiwan)

Yen-Cheng Li

Everlight Chemical Industrial Corp. (Taiwan)

Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730E (April 01, 2009); doi:10.1117/12.813626
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From Conference Volume 7273

  • Advances in Resist Materials and Processing Technology XXVI
  • Clifford L. Henderson
  • San Jose, California, USA | February 22, 2009

abstract

Electron beam direct writing (EBDW) resist process is slow in throughput but has the highest linewidth resolution among all the lithography techniques. However the e-beam energy is high enough to cut off the polymer chain of DUV chemically amplified resist (CAR) and thus in this paper, DUV-assisted e-beam resist process is studied to increase throughput. The C/H critical dimension (CD) with e-beam exposure only increases for larger dose. E-beam dose-to-size of C/H is found to be independent on pattern density. The smallest CD resolved is 30.2 nm for 30 nm designed CD. DUV pre-exposed resist resolves the same C/H CD size with lower e-beam dose. Largest e-beam dose reduction with DUV-assistance is ~40% for 50 and 70 nm designed CD of C/Hs. BARC coating and multiple DUV pre-exposures with variable depths are studied for obtaining a vertical profile like that exposed by e-beam only.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Wei-Su Chen ; Yen-Cheng Li and Ming-Jinn Tsai
"DUV-assisted e-beam resist process", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730E (April 01, 2009); doi:10.1117/12.813626; http://dx.doi.org/10.1117/12.813626


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