EUV source development for high-volume chip manufacturing tools

Uwe Stamm; Masaki Yoshioka; Jürgen Kleinschmidt; Christian Ziener; Guido Schriever; Max C. Schürmann; Guido Hergenhan; Vladimir M. Borisov

doi:10.1117/12.712136

15 March 2007 EUV source development for high-volume chip manufacturing tools

Uwe Stamm, Masaki Yoshioka, Jürgen Kleinschmidt, Christian Ziener, Guido Schriever, Max C. Schürmann, Guido Hergenhan, Vladimir M. Borisov

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Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65170P (2007) https://doi.org/10.1117/12.712136
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Xenon-fueled gas discharge produced plasma (DPP) sources were integrated into Micro Exposure Tools already in 2004. Operation of these tools in a research environment gave early learning for the development of EUV sources for Alpha and Beta-Tools. Further experiments with these sources were performed for basic understanding on EUV source technology and limits, especially the achievable power and reliability. The intermediate focus power of Alpha-Tool sources under development is measured to values above 10 W. Debris mitigation schemes were successfully integrated into the sources leading to reasonable collector mirror lifetimes with target of 10 billion pulses due to the effective debris flux reduction. Source collector mirrors, which withstand the radiation and temperature load of Xenon-fueled sources, have been developed in cooperation with MediaLario Technologies to support intermediate focus power well above 10 W. To fulfill the requirements for High Volume chip Manufacturing (HVM) applications, a new concept for HVM EUV sources with higher efficiency has been developed at XTREME technologies. The discharge produced plasma (DPP) source concept combines the use of rotating disk electrodes (RDE) with laser exited droplet targets. The source concept is called laser assisted droplet RDE source. The fuel of these sources has been selected to be Tin. The conversion efficiency achieved with the laser assisted droplet RDE source is 2-3x higher compared to Xenon. Very high pulse energies well above 200 mJ / 2&pgr; sr have been measured with first prototypes of the laser assisted droplet RDE source. If it is possible to maintain these high pulse energies at higher repetition rates a 10 kHz EUV source could deliver 2000 W / 2&pgr; sr. According to the first experimental data the new concept is expected to be scalable to an intermediate focus power on the 300 W level.

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Uwe Stamm, Masaki Yoshioka, Jürgen Kleinschmidt, Christian Ziener, Guido Schriever, Max C. Schürmann, Guido Hergenhan, and Vladimir M. Borisov "EUV source development for high-volume chip manufacturing tools", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170P (15 March 2007); https://doi.org/10.1117/12.712136

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