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Proceedings Article

Multilayer Zr/Si filters for EUV lithography and for radiation source metrology

[+] Author Affiliations
M. S. Bibishkin, N. I. Chkhalo, S. A. Gusev, E. B. Kluenkov, A. Y. Lopatin, V. I. Luchin, A. E. Pestov, N. N. Salashchenko, N. N. Tsybin, S. Y. Zuev

Institute for Physics of Microstructures (Russia)

L. A. Shmaenok

PhysTech (Netherlands)

Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702502 (April 29, 2008); doi:10.1117/12.802347
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From Conference Volume 7025

  • Micro- and Nanoelectronics 2007
  • Kamil A. Valiev; Alexander A. Orlikovsky
  • | May 23, 2008

abstract

The technique for fabrication of thin film filters with high mechanical strength, capable of withstanding the prolonged heat load of 1 W/cm2, has been developed. Freestanding multilayer Zr/Si filters of size 20×150 mm2 with high transparency of 76% at wavelength λ = 13 nm were manufactured for EUV lithography tool. We have also developed and fabricated various designs of filters (freestanding or mesh supported) with lower transparency of 40-50% for experiments with intensive EUV sources. The tests of differential pressure withstandability and heat-resistance of filter samples were fulfilled. In order to model the influence on the filter of intensive radiation of the lithography source we have tested Zr/Si film samples by the Joule heating in vacuum at residual pressure of 10-8 Torr. The testing consisted in continuous heating of Zr/Si films at the electrical power per area unit from 0.5 W/cm2 to 6 W/cm2 during long period of time (up to 2 months). The influence of the long-term heat load on the transparency of samples at λ = 13 nm and within wavelength region 0.3 - 2 μm was investigated.

© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

M. S. Bibishkin ; N. I. Chkhalo ; S. A. Gusev ; E. B. Kluenkov ; A. Y. Lopatin, et al.
"Multilayer Zr/Si filters for EUV lithography and for radiation source metrology", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702502 (April 29, 2008); doi:10.1117/12.802347; http://dx.doi.org/10.1117/12.802347


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