Multilayer Zr/Si filters for EUV lithography and for radiation source metrology

M. S. Bibishkin; N. I. Chkhalo; S. A. Gusev; E. B. Kluenkov; A. Ya. Lopatin; V. I. Luchin; A. E. Pestov; N. N. Salashchenko; L. A. Shmaenok; N. N. Tsybin; S. Yu. Zuev

doi:10.1117/12.802347

29 April 2008 Multilayer Zr/Si filters for EUV lithography and for radiation source metrology

M. S. Bibishkin, N. I. Chkhalo, S. A. Gusev, E. B. Kluenkov, A. Ya. Lopatin, V. I. Luchin, A. E. Pestov, N. N. Salashchenko, L. A. Shmaenok, N. N. Tsybin, S. Yu. Zuev

Author Affiliations +

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702502 (2008) https://doi.org/10.1117/12.802347
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

The technique for fabrication of thin film filters with high mechanical strength, capable of withstanding the prolonged heat load of 1 W/cm², has been developed. Freestanding multilayer Zr/Si filters of size 20×150 mm² with high transparency of 76% at wavelength λ = 13 nm were manufactured for EUV lithography tool. We have also developed and fabricated various designs of filters (freestanding or mesh supported) with lower transparency of 40-50% for experiments with intensive EUV sources. The tests of differential pressure withstandability and heat-resistance of filter samples were fulfilled. In order to model the influence on the filter of intensive radiation of the lithography source we have tested Zr/Si film samples by the Joule heating in vacuum at residual pressure of 10^-8 Torr. The testing consisted in continuous heating of Zr/Si films at the electrical power per area unit from 0.5 W/cm² to 6 W/cm² during long period of time (up to 2 months). The influence of the long-term heat load on the transparency of samples at λ = 13 nm and within wavelength region 0.3 - 2 μm was investigated.

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M. S. Bibishkin, N. I. Chkhalo, S. A. Gusev, E. B. Kluenkov, A. Ya. Lopatin, V. I. Luchin, A. E. Pestov, N. N. Salashchenko, L. A. Shmaenok, N. N. Tsybin, and S. Yu. Zuev "Multilayer Zr/Si filters for EUV lithography and for radiation source metrology", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702502 (29 April 2008); https://doi.org/10.1117/12.802347

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