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Proceedings Article

Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide

[+] Author Affiliations
Joyeeta Nag, Judson D. Ryckman, Michael T. Hertkorn, Bo K. Choi, Richard F. Haglund, Jr., Sharon M. Weiss

Vanderbilt Univ. (USA)

Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759710 (February 25, 2010); doi:10.1117/12.843866
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From Conference Volume 7597

  • Physics and Simulation of Optoelectronic Devices XVIII
  • Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski
  • San Francisco, California | January 23, 2010

abstract

We present an optical modulator based on a silicon ring resonator coated with vanadium-dioxide (VO2) motivated by the need for compact silicon-compatible optical switches operating at THz speeds. VO2 is a functional oxide undergoing metal-insulator transition (MIT) near 67°C, with huge changes in electrical resistivity and near-infrared transmission. The MIT can be induced thermally, optically (by ultra-fast laser excitation in less than 100 fs), and possibly with electric field. VO2 is easily deposited on silicon and its ultrafast switching properties in the near-infrared can be used to tune the effective index of ring resonators in the telecommunication frequencies instead of depending on the weak electro-optic properties of silicon. The VO2-silicon hybrid ring resonator is expected to operate at speeds up to 10 THz at low Q-factor and with shorter cavity lifetimes, thus enabling compact, faster, more robust devices. We have made ring resonator structures on SOI substrates with rings varying in diameter from 3-10 μm coupled to 5 mm-long nanotapered waveguides at separations of 200 nm. Rings were coated with 80 nm of VO2 by pulsed laser deposition. As proof-of-concept, by switching the VO2 top layer thermally, we were able to modulate the resonance frequency of the ring to match with the predictions from our FDTD simulations.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Joyeeta Nag ; Judson D. Ryckman ; Michael T. Hertkorn ; Bo K. Choi ; Richard F. Haglund, Jr., et al.
"Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759710 (February 25, 2010); doi:10.1117/12.843866; http://dx.doi.org/10.1117/12.843866


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