Layered oxonitrido silicate (SiON) phosphors for high power LEDs

Peter Schmidt; Andreas Tuecks; Helmut Bechtel; Detlef Wiechert; Regina Mueller-Mach; Gerd Mueller; Wolfgang Schnick

doi:10.1117/12.793000

12 September 2008 Layered oxonitrido silicate (SiON) phosphors for high power LEDs

Peter Schmidt, Andreas Tuecks, Helmut Bechtel, Detlef Wiechert, Regina Mueller-Mach, Gerd Mueller, Wolfgang Schnick

Proceedings Volume 7058, Eighth International Conference on Solid State Lighting; 70580L (2008) https://doi.org/10.1117/12.793000
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

In our contribution we discuss structure-luminescence property relations of MSi₂O₂N₂:Eu (M = Ba, Sr, Ca) phosphors to explain the differences in excitability, emission band position and width. The differences in Eu²⁺ site coordination, number and size of sites lead to a shift of emission from M = Ba over M = Sr to M = Ca from cyan to yellow accompanied by an increased Stokes shift. Because of its favourable emission properties with a peak at ~ 538 nm SrSi₂O₂N₂:Eu was selected and optimized as down-conversion material for green pcLEDs. pcLEDs built with LUXEON^R thin-film flip chip (TFFC) LEDs show stable color points under a wide range of drive conditions (I ≤ 1A, T ≤ 150°C) as a consequence of the very high conversion efficiency of optimized SrSi₂O₂N₂:Eu color converters. Although cutbacks in color purity have to be made because of the broad band phosphor emission spectrum, efficacies of the discussed green pcLEDs are significantly higher compared to direct green emitting InGaN LEDs.

Citation Download Citation

Peter Schmidt, Andreas Tuecks, Helmut Bechtel, Detlef Wiechert, Regina Mueller-Mach, Gerd Mueller, and Wolfgang Schnick "Layered oxonitrido silicate (SiON) phosphors for high power LEDs", Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580L (12 September 2008); https://doi.org/10.1117/12.793000

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