Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes

J. Müller; G. Brüderl; M. Schillgalies; A. Breidenassel; S. Tautz; D. Dini; T. Lermer; S. Lutgen; U. Strauß

doi:10.1117/12.842130

10 March 2010 Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes

J. Müller, G. Brüderl, M. Schillgalies, A. Breidenassel, S. Tautz, D. Dini, T. Lermer, S. Lutgen, U. Strauß

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 760222 (2010) https://doi.org/10.1117/12.842130
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We present analytical methods to study the physical mechanisms of the optical output stability of blue InGaN laser diodes in short and long-term stress experiments. Lasers of three ridge widths were stressed under constant current condition at a constant current density. The output power of a 1.8μm ridge laser decreased down to 40% within 15h mainly due to an increase in threshold current. Broader ridges showed a more stable output power. The decline in output power was related to changes in quantum efficiency and longer carrier lifetimes after stress. A simple recombination model was fitted to the measurements indicating no increase in non-radiative recombination centers. Instead the longer carrier lifetimes could be well explained with a decrease in carrier density due to an additional current spreading. These results were confirmed by changes in the sub-threshold wavelength shift before and after aging.

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J. Müller, G. Brüderl, M. Schillgalies, A. Breidenassel, S. Tautz, D. Dini, T. Lermer, S. Lutgen, and U. Strauß "Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760222 (10 March 2010); https://doi.org/10.1117/12.842130

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