Novel types of silicon waveguides fabricated using proton beam irradiation

E. J. Teo; P. Yang; B. Q. Xiong; M. B. H. Breese; G. Z. Mashanovich; Y. S. Ow; G. T. Reed; A. A. Bettiol

doi:10.1117/12.841536

16 February 2010 Novel types of silicon waveguides fabricated using proton beam irradiation

E. J. Teo, P. Yang, B. Q. Xiong, M. B. H. Breese, G. Z. Mashanovich, Y. S. Ow, G. T. Reed, A. A. Bettiol

Proceedings Volume 7606, Silicon Photonics V; 76060M (2010) https://doi.org/10.1117/12.841536
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

In this work, we describe the use of a combination of proton beam irradiation and electrochemical etching to fabricate high index-contrast waveguides directly in silicon without the need for silicon-on-insulator substrate. Various types of waveguides with air or porous silicon cladding have been demonstrated. We show that porous silicon (PS) is a flexible cladding material due to the tunability of its refractive index and thickness. The Si/PS waveguide system also possesses better transmittance in the ranges of 1.2-9 and 23-200 μm, compared to Si/SiO₂ waveguides. This is potentially important for mid and far-IR applications. Since it is compatible with conventional CMOS technology, this process can be used for fabrication of integrated optoelectronics circuits.

Citation Download Citation

E. J. Teo, P. Yang, B. Q. Xiong, M. B. H. Breese, G. Z. Mashanovich, Y. S. Ow, G. T. Reed, and A. A. Bettiol "Novel types of silicon waveguides fabricated using proton beam irradiation", Proc. SPIE 7606, Silicon Photonics V, 76060M (16 February 2010); https://doi.org/10.1117/12.841536

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