Paper
16 February 2010 Ultra-low energy switches based on silicon photonic crystals for on-chip optical interconnects
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Proceedings Volume 7606, Silicon Photonics V; 76060R (2010) https://doi.org/10.1117/12.843592
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Although switching techniques based on charge injection in silicon have progressed greatly in recent years, switching energies are still above 10 fJ/bit, which is considered the threshold for practical implementation in on-chip optical interconnects. This is due primarily to silicon's relatively weak electro-optic response, as well as the large physical extent of existing switching geometries, both of which increase the energy required to achieve switching. By using a resonant approach in which the optical mode is spatially tightly confined, however, the volume of active material is decreased, resulting in reduced switching energy. In this paper we report on the use of a thin MOS capacitor to inject charge into a resonator based on a photonic crystal microcavity. By injecting charge only into the volume in which the optical mode is localized, switching energy can be reduced below 1 fJ/bit. The index shift available (Δn ~ 0.001) allows the use of a relatively low-Q resonator (Q ~ 550), enabling high optical bandwidth of 100 Gbps with a device footprint below 25 μm2.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sean P. Anderson and Philippe M. Fauchet "Ultra-low energy switches based on silicon photonic crystals for on-chip optical interconnects", Proc. SPIE 7606, Silicon Photonics V, 76060R (16 February 2010); https://doi.org/10.1117/12.843592
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Cited by 4 scholarly publications.
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KEYWORDS
Photonic crystals

Switching

Optical microcavities

Silicon

Modulators

Optical interconnects

Electrodes

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