Optical, chemical, and depth characterization of Al/SiC periodic multilayers

P. Jonnard; K. Le Guen; M.-H. Hu; J.-M. André; E. Meltchakov; C. Hecquet; F. Delmotte; A. Galtayries

doi:10.1117/12.820913

30 April 2009 Optical, chemical, and depth characterization of Al/SiC periodic multilayers

P. Jonnard, K. Le Guen, M.-H. Hu, J.-M. André, E. Meltchakov, C. Hecquet, F. Delmotte, A. Galtayries

Proceedings Volume 7360, EUV and X-Ray Optics: Synergy between Laboratory and Space; 73600O (2009) https://doi.org/10.1117/12.820913
Event: SPIE Optics + Optoelectronics, 2009, Prague, Czech Republic

Abstract

We present the characterization of Al/SiC periodic multilayers designed for optical applications. In some samples, a thin layer of W or Mo is added at the SiC-on-Al interfaces. We use x-ray reflectivity (XRR) in order to determine the parameters of the stacks, i.e. thickness and roughness of all the layers. We have performed x-ray emission spectroscopy (XES) to identify the chemical state of the Al and Si atoms present within the structure from an analysis of the shape of the Al Kβ and Si Kβ emission bands. Finally, time of flight secondary ion mass spectrometry (ToF-SIMS) is used to obtain the depth profile of the different elements present within the studied stacks. A fit of the XRR curves shows that the Al/SiC multilayer present large interfacial roughness (up to 2.8 nm), which is decreased considerably (down to 1 nm or less) when the refractory metal layers are introduced in the periodic structure. The combination of XES and ToFSIMS allows us to conclude that in these systems the roughness is a purely geometrical parameter and not related to chemical interfacial reactions.

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P. Jonnard, K. Le Guen, M.-H. Hu, J.-M. André, E. Meltchakov, C. Hecquet, F. Delmotte, and A. Galtayries "Optical, chemical, and depth characterization of Al/SiC periodic multilayers", Proc. SPIE 7360, EUV and X-Ray Optics: Synergy between Laboratory and Space, 73600O (30 April 2009); https://doi.org/10.1117/12.820913

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