InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors

Martin Walther; Robert Rehm; Johannes Schmitz; Joachim Fleissner; Frank Rutz; Lutz Kirste; Ralf Scheibner; Joachim Wendler; Johann Ziegler

doi:10.1117/12.842065

22 January 2010 InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors

Martin Walther, Robert Rehm, Johannes Schmitz, Joachim Fleissner, Frank Rutz, Lutz Kirste, Ralf Scheibner, Joachim Wendler, Johann Ziegler

Author Affiliations +

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76081Z (2010) https://doi.org/10.1117/12.842065
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

InAs/GaSb short-period superlattices (SL) based on GaSb, InAs and AlSb have proven their great potential for high performance infrared detectors. Lots of interest is currently focused on the development of short-period InAs/GaSb SLs for advanced 2nd and 3rd generation infrared detectors between 3 - 30 μm. For the fabrication of mono- and bispectral thermal imaging systems in the mid-wavelength infrared region (MWIR) a manufacturable technology for high responsivity thermal imaging systems has been developed. InAs/GaSb short-period superlattices can be fabricated with up to 1000 periods in the intrinsic region without revealing diffusion limited behavior. This enables the fabrication of InAs/GaSb SL camera systems with high responsivity comparable to state of the art CdHgTe and InSb detectors. The material system is also ideally suited for the fabrication of dual-color MWIR/MWIR InAs/GaSb SL camera systems with high quantum efficiency for missile approach warning systems with simultaneous and spatially coincident detection in both spectral channels.

Citation Download Citation

Martin Walther, Robert Rehm, Johannes Schmitz, Joachim Fleissner, Frank Rutz, Lutz Kirste, Ralf Scheibner, Joachim Wendler, and Johann Ziegler "InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081Z (22 January 2010); https://doi.org/10.1117/12.842065

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