Growth of InAs/Sb:GaAs quantum dots by the antimony surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 um band

Denis Guimard; Damien Bordel; Mitsuru Ishida; Masao Nishioka; Yuki Wakayama; Yu Tanaka; Hisao Sudo; Tsuyoshi Yamamoto; Hayato Kondo; Mitsuru Sugawara; Yasuhiko Arakawa

doi:10.1117/12.842864

24 February 2010 Growth of InAs/Sb:GaAs quantum dots by the antimony surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band

Denis Guimard, Damien Bordel, Mitsuru Ishida, Masao Nishioka, Yuki Wakayama, Yu Tanaka, Hisao Sudo, Tsuyoshi Yamamoto, Hayato Kondo, Mitsuru Sugawara, Yasuhiko Arakawa

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Proceedings Volume 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII; 76100D (2010) https://doi.org/10.1117/12.842864
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We present a general method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated growth. Unlike conventional InAs/GaAs QDs, we show that the control of the interface properties of the InAs/Sb:GaAs QDs is crucial. Our method consists in growing InAs QDs on an antimony-irradiated GaAs surface, in order to exploit the surfactant properties of antimony, and then removing the excess segregated antimony by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of the antimony-surfactant mediated growth (high density QDs, no coalescence, no emission blueshift after annealing), without the detrimental formation of antimony-induced non-radiative defects. We show that the lasing characteristics of InAs/Sb:GaAs QD lasers grown by metal organic chemical vapor deposition in the 1.3 μm band are drastically improved, with a reduced threshold current density and higher internal quantum efficiency. These studies advance the understanding of key processes in antimony-mediated growth of InAs QDs and will allow full utilization of its advantages for integration in opto-electronic devices.

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Denis Guimard, Damien Bordel, Mitsuru Ishida, Masao Nishioka, Yuki Wakayama, Yu Tanaka, Hisao Sudo, Tsuyoshi Yamamoto, Hayato Kondo, Mitsuru Sugawara, and Yasuhiko Arakawa "Growth of InAs/Sb:GaAs quantum dots by the antimony surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band", Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100D (24 February 2010); https://doi.org/10.1117/12.842864

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KEYWORDS

Antimony

Etching

Interfaces

Indium arsenide

Metalorganic chemical vapor deposition

Gallium arsenide

Annealing

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