No systematic studies on 1060nm high speed VCSELs have been reported in terms with reliability so far to our best knowledge. In this work, a systematic and intensive study on reliability has been performed for our 1060nm VCSELs consist of double intra-cavity and oxide confined structure with >70ps eye opening margin in Ib=3mA. Estimated power dissipation per bit rate of >5Gbps/mW at Ib=2mA was obtained from low series resistance and low drive voltage characteristics due to effective current injection in our double intra-cavity structure. Aging tests for 3,467pcs discrete non-hermetic VCSELs were performed under 6mA, 70°C to 120°C and up to 5,736 hours, which is equivalent to over 10million device hours in normal operating condition of 40°C and Ib=5mA. We found one degraded device due to the disconnection of the metal interconnecting layer, resulting in 81Fits (C.L.=90%) under Ea=0.35eV and no current accelerated factor. Also, their degradation of threshold current after 1,000 hours operation was less than 0.1mA under high stress condition of >40kA/cm2 and 120°C, which corresponds to more than hundreds year operation. No eye diagram degradation was observed as far as no large threshold current increase under the high stress condition up to 40kA/cm2. It is experimentally proven that inherent potentiality of the VCSELs with 1060nm InGaAs-QW and double intra-cavity structure would be applicable to the future large green data traffic system.© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.