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Proceedings Article

Surface-emitting THz sources based on difference-frequency generation in mid-infrared quantum cascade lasers

[+] Author Affiliations
M. Geiser

Harvard Univ. (USA) and ETH Zürich (Switzerland)

C. Pflügl, Q. J. Wang, N. Yu, M. A. Belkin, Federico Capasso

Harvard Univ. (USA)

A. Belyanin

Texas A&M Univ. (USA)

T. Edamura, H. Kan

Hamamatsu Photonics K.K. (Japan)

M. Fischer, A. Wittmann, J. Faist

ETH Zürich (Switzerland)

Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160R (February 12, 2010); doi:10.1117/12.845066
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From Conference Volume 7616

  • Novel In-Plane Semiconductor Lasers IX
  • Alexey A. Belyanin; Peter M. Smowton
  • San Francisco, California | January 23, 2010

abstract

We report a surface-emitting THz source based on intracavity difference-frequency generation in dual-wavelength midinfrared quantum cascade lasers with integrated giant second-order nonlinear susceptibility. The THz light is coupled out of the waveguide by a second-order grating etched into the laser ridges. In contrast to sources where the difference-frequency radiation is emitted from the facet, this approach enables extraction of the THz emission from the whole length of the device even when the coherence length is small. We also studied the properties of the mid-infrared pump beams and found that due to gain competition, mid-infrared modes tend to start lasing in higher order lateral modes. The mid-infrared mode with the lower threshold current reduces population inversion for the second laser with the higher threshold current due to stimulated emission. We developed a rate equation model to quantitatively describe mode interactions due to mutual gain depletion.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

M. Geiser ; C. Pflügl ; A. Belyanin ; Q. J. Wang ; N. Yu, et al.
"Surface-emitting THz sources based on difference-frequency generation in mid-infrared quantum cascade lasers", Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160R (February 12, 2010); doi:10.1117/12.845066; http://dx.doi.org/10.1117/12.845066


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