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Proceedings Article

Quantum structure optimization for infrared detection

[+] Author Affiliations
Ning Li, Hong-lou Zhen, Wang-ping Wang, Jian Wang, Xiao-shuang Chen, Zhi-feng Li, Wei Lu

Shanghai Institute of Technical Physics (China)

Wen-xin Wang, Hong Chen

Institute of Physics (China)

Feng-qi Liu

Institute of Semiconductors (China)

Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 738306 (August 04, 2009); doi:10.1117/12.839635
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From Conference Volume 7383

  • International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications
  • Jeffery Puschell; Hai-mei Gong; Yi Cai; Jin Lu; Jin-dong Fei
  • Beijing, China | June 17, 2009

abstract

Quantum structure has been optimized for the excited state confinement to improve the detector performance of quantum wells infrared detector (QWIP) and quantum dots infrared detector (QDIP). By the energy band engineering, the quantum states in quantum structure are easier to be manipulated than the case in interband transition of bulk material. Moreover, the confined state in resonant tunneling diode has shown its function to amplify the photo-excited carrier in the order of 107, which imply that a new high sensitivity infrared detector will be resulted from the integration of such amplification quantum structure with the quantum inter-subband transition structure. The optimized quantum structure has been used for the QDIP linear array and very long wavelength QWIP linear array in the format of 256×1. The response peak for QDIP is at 6μm. Two type of QWIP is developed with the response peak at 12μm and 15μm, respectively.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Ning Li ; Hong-lou Zhen ; Wang-ping Wang ; Jian Wang ; Xiao-shuang Chen, et al.
"Quantum structure optimization for infrared detection", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 738306 (August 04, 2009); doi:10.1117/12.839635; http://dx.doi.org/10.1117/12.839635


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