Paper
31 December 2009 Peculiarities of InSe absorption spectra in the domain of direct exciton transitions
Natalya K. Kramar, Valeriy M. Kramar, Olena V. Pugantseva
Author Affiliations +
Proceedings Volume 7388, Ninth International Conference on Correlation Optics; 738812 (2009) https://doi.org/10.1117/12.853583
Event: Correlation Optics 2009, 2009, Chernivsti, Ukraine
Abstract
The results of theoretical investigation of the peculiarities of exciton-phonon interaction in ε-InSe and its influence on the absorption spectrum in the domain of transitions into basic and higher exciton states are represented in this paper. The values of maximum shift of the corresponding exciton band and its half-width were calculated taking into account the interaction with low-energy and conventional longitudinal optical phonons and with oscillations of the bend wave important for layered crystals. For the bands connected with direct vertical transitions into the basic and higher exciton states the temperature changes of their partial shifts and extensions caused by the interaction with each of the mentioned branches of the phonon spectrum were studied.
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Natalya K. Kramar, Valeriy M. Kramar, and Olena V. Pugantseva "Peculiarities of InSe absorption spectra in the domain of direct exciton transitions", Proc. SPIE 7388, Ninth International Conference on Correlation Optics, 738812 (31 December 2009); https://doi.org/10.1117/12.853583
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KEYWORDS
Excitons

Absorption

Phonons

Crystals

Temperature metrology

Semiconductors

3D modeling

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