Direct modeling of external quantum efficiency of silicon trap detectors

Thiago Menegotto; Maurício S. Lima; Giovanna B. Almeida; Iakyra B. Couceiro; Hans Peter Grieneisen

doi:10.1117/12.889436

23 May 2011 Direct modeling of external quantum efficiency of silicon trap detectors

Thiago Menegotto, Maurício S. Lima, Giovanna B. Almeida, Iakyra B. Couceiro, Hans Peter Grieneisen

Proceedings Volume 8083, Modeling Aspects in Optical Metrology III; 808313 (2011) https://doi.org/10.1117/12.889436
Event: SPIE Optical Metrology, 2011, Munich, Germany

Abstract

It is shown the feasibility of direct fitting of external quantum efficiency for silicon trap detectors which are applied as radiometric transfer standards at several National Institutes of Metrology. The model considers the internal quantum efficiency and the reflectance of the detector, whose parameters are fitted in the measured data of external quantum efficiency. The advantage of the suggested approach is the possibility of pursuing interpolation of spectral responsivity without loss of physical meaning of the fitted parameters.

Citation Download Citation

Thiago Menegotto, Maurício S. Lima, Giovanna B. Almeida, Iakyra B. Couceiro, and Hans Peter Grieneisen "Direct modeling of external quantum efficiency of silicon trap detectors", Proc. SPIE 8083, Modeling Aspects in Optical Metrology III, 808313 (23 May 2011); https://doi.org/10.1117/12.889436

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