Paper
20 August 2009 Si integrated pyroelectric sensor array using epitaxial γ-Al2O3/Si substrates and epitaxial PZT thin films
Daisuke Akai, Naoki Kawazu, Takahiro Sugai, Kazuaki Sawada, Makoto Ishida
Author Affiliations +
Abstract
In this paper, we report that integrated pyroelectric infrared(IR) sensor array using surface micromachine technique with nMOS/nJFET devices on epitaxial γ-Al2O3/Si substrates has been successfully fabricated. Orientation and crystallinity control of pyroelectric and ferroelectric films are important to archive high sensitivity pyroelectric IR detector. We propose epitaxial γ-Al2O3 thin films as buffer layer on Si substrates to control them. Each pixel of fabricated IR sensor array has a thermally isolated Au/PZT(001)/Pt(001)/γ-Al2O3 stacked membrane detector, a low noise nJFET source follower and a switching nMOSFET. A voltage sensitivity of a fabricated detector is increased by forming thermal isolated structure. The fabricated sensor operated under a chopping frequency of 100 Hz. The RV, NEP and D* at 30 Hz are 1703 V/W, 7.22 × 10-11 WHz-1/2 and 1.38 × 108 cmHz1/2W-1, respectively. This sensor will have potential for Si integrated pyroelectric IR imager.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daisuke Akai, Naoki Kawazu, Takahiro Sugai, Kazuaki Sawada, and Makoto Ishida "Si integrated pyroelectric sensor array using epitaxial γ-Al2O3/Si substrates and epitaxial PZT thin films", Proc. SPIE 7419, Infrared Systems and Photoelectronic Technology IV, 741905 (20 August 2009); https://doi.org/10.1117/12.824370
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Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Infrared sensors

Silicon

Thermography

Thin films

Ferroelectric materials

Infrared imaging

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