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Proceedings Article

Terahertz imaging with a quantum cascade laser and amorphous-silicon microbolometer array

[+] Author Affiliations
F. Simoens, T. Durand, J. Meilhan

Commissariat à l'Energie Atomique (France)

P. Gellie, W. Maineult, C. Sirtori, S. Barbieri

Lab. Matériaux et phénomènes, CNRS, Univ. Paris Diderot (France)

H. Beere, D. Ritchie

Univ. of Cambridge (United Kingdom)

Proc. SPIE 7485, Millimetre Wave and Terahertz Sensors and Technology II, 74850M (September 24, 2009); doi:10.1117/12.830350
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From Conference Volume 7485

  • Millimetre Wave and Terahertz Sensors and Technology II
  • Keith A. Krapels; Neil A. Salmon
  • Berlin, Germany | August 31, 2009

abstract

Portability, low cost and fast acquisition rates are key features that a THz imaging system should satisfy for extended commercialized applications. With regards to these features, the source - detector association of a THz Quantum Cascade Laser (QCL) with an un-cooled micro-bolometer two-dimensional array looks promising for THz active imaging. QCLs performance is rapidly improving, with higher operating temperatures and output powers recently demonstrated. On the detector side, un-cooled micro-bolometer array opens the way to real-time video rate, with no raster scanning and potential low cost. In parallel to the development of room temperature micro-bolometer sensors specifically designed for the THz range, the authors have characterized experimentally the sensitivity of CEA-LETI standard amorphous Silicon infrared microbolometers illuminated by a 3THz QCL. The sensitivity of these existing sensors is then compared to the expected sensitivity of the CEA-LETI upcoming THz sensors.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

F. Simoens ; T. Durand ; J. Meilhan ; P. Gellie ; W. Maineult, et al.
"Terahertz imaging with a quantum cascade laser and amorphous-silicon microbolometer array", Proc. SPIE 7485, Millimetre Wave and Terahertz Sensors and Technology II, 74850M (September 24, 2009); doi:10.1117/12.830350; http://dx.doi.org/10.1117/12.830350


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