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Proceedings Article

Small pixel a-Si/a-SiGe bolometer focal plane array technology at L-3 Communications

[+] Author Affiliations
Charles M. Hanson, Sameer K. Ajmera, John Brady, Thomas Fagan, William McCardel, Diane Morgan, Tom Schimert, A. J. Syllaios, Michael F. Taylor

L-3 Communications Electro-Optical Systems (USA)

Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600R (July 28, 2010); doi:10.1117/12.852511
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From Conference Volume 7660

  • Infrared Technology and Applications XXXVI
  • Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton
  • Orlando, Florida | April 05, 2010

abstract

Recent developments in low-noise, high temperature coefficient of resistance (TCR) amorphous silicon and amorphous silicon germanium material have led to the development of uncooled focal plane arrays, with TCR in the range 3.2%/K to 3.9%/K, which has been leveraged in the small pixel FPA development at L-3 EOS. In the 17μm pixel technology node at present, 1024x768, 640×480, and 320x240 FPAs have thus far been developed. All three formats employ waferlevel vacuum packaging, with the 1024x768 representing the largest format uncooled FPA wafer-level packaged to date. FPA results from all three formats will be discussed and images will be presented.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Charles M. Hanson ; Sameer K. Ajmera ; John Brady ; Thomas Fagan ; William McCardel, et al.
"Small pixel a-Si/a-SiGe bolometer focal plane array technology at L-3 Communications", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600R (July 28, 2010); doi:10.1117/12.852511; http://dx.doi.org/10.1117/12.852511


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