Recent developments in low-noise, high temperature coefficient of resistance (TCR) amorphous silicon and amorphous silicon germanium material have led to the development of uncooled focal plane arrays, with TCR in the range 3.2%/K to 3.9%/K, which has been leveraged in the small pixel FPA development at L-3 EOS. In the 17μm pixel technology node at present, 1024x768, 640×480, and 320x240 FPAs have thus far been developed. All three formats employ waferlevel vacuum packaging, with the 1024x768 representing the largest format uncooled FPA wafer-level packaged to date. FPA results from all three formats will be discussed and images will be presented.© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.