CoSi[sub]2[/sub]/TiO[sub]2[/sub]/SiO[sub]2[/sub]/Si gate structure formation

A. E. Rogozhin; I. A. Khorin; V. V. Naumov; A. A. Orlikovsky; V. V. Ovcharov; V. I. Rudakov; A. G. Vasiliev

doi:10.1117/12.854302

26 February 2010 CoSi₂/TiO₂/SiO₂/Si gate structure formation

A. E. Rogozhin, I. A. Khorin, V. V. Naumov, A. A. Orlikovsky, V. V. Ovcharov, V. I. Rudakov, A. G. Vasiliev

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210L (2010) https://doi.org/10.1117/12.854302
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

Recently investigations of the technologies using self-organization and phase layering occur more and more frequently. Considerable simplifications of processes, self-alignment of elements and reduction of stage quantity are the reasons of that. In this work we present results of computer simulation and experimental study of CoSi₂/TiO₂/SiO₂/Si gate structure formation technology which uses solid-phase diffusion and phase-layering. The bilayer of TiO₂ and SiO₂ was chosen as gate dielectric because titanium dioxide is possessed of extremely high dielectric permittivity and silicon dioxide has large band gap and high quality interface with Si. Because of its low resistivity CoSi₂ is considered now as one of the most prospective material for metal gate electrodes. The technology which was simulated in this work allows to form such a gate structure during the sole annealing process. To compute the technology parameters the program, which take into account diffusion properties of Co, Ti, Si and O was realized. Also the same structure was formed by rapid thermal oxidation and magnetron sputtering, with following rapid annealing. Simulation and experimental results show that the technology can be used for gate structure formation.

Citation Download Citation

A. E. Rogozhin, I. A. Khorin, V. V. Naumov, A. A. Orlikovsky, V. V. Ovcharov, V. I. Rudakov, and A. G. Vasiliev "CoSi₂/TiO₂/SiO₂/Si gate structure formation", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210L (26 February 2010); https://doi.org/10.1117/12.854302

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