Amorphous Si crystallization by 405-nm GaN laser diodes for high-performance TFT applications: advantages of using 405-nm wavelength

Kiyoshi Morimoto; Nobuyasu Suzuki; Xinbing Liu; Katsuya Samonji; Kazuhiko Yamanaka; Masaaki Yuri

doi:10.1117/12.907145

17 February 2012 Amorphous Si crystallization by 405-nm GaN laser diodes for high-performance TFT applications: advantages of using 405-nm wavelength

Kiyoshi Morimoto, Nobuyasu Suzuki, Xinbing Liu, Katsuya Samonji, Kazuhiko Yamanaka, Masaaki Yuri

Author Affiliations +

Proceedings Volume 8244, Laser-based Micro- and Nanopackaging and Assembly VI; 824407 (2012) https://doi.org/10.1117/12.907145
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

A 405 nm LDs crystallization method of a-Si has been applied to the processing of bottom gate (BG) type microcystalline (μc-) Si TFT for the first time. We have successfully demonstrated superior I-V characteristics of BG μc- Si TFTs. In order to verify the validity of our process, we performed a heat flow simulation and compared commercially available lasers having wavelengths of 405, 445 and 532 nm. The simulation explained well the experimental results and showed that the wavelength is a crucial factor on uniformity, energy efficiency, and process margin and the 405 nm gave the best results among the three wavelengths.

Citation Download Citation

Kiyoshi Morimoto, Nobuyasu Suzuki, Xinbing Liu, Katsuya Samonji, Kazuhiko Yamanaka, and Masaaki Yuri "Amorphous Si crystallization by 405-nm GaN laser diodes for high-performance TFT applications: advantages of using 405-nm wavelength", Proc. SPIE 8244, Laser-based Micro- and Nanopackaging and Assembly VI, 824407 (17 February 2012); https://doi.org/10.1117/12.907145

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