Paper
19 August 2010 Electro-chromic device with GZO as a conductive layer
Author Affiliations +
Abstract
Thin films of tungsten oxide (WO3) were deposited on GZO-coated B270 glass substrates and thin films of Ta2O5 were deposited on B270 glass substrates by electron beam gun evaporation at high vacuum pressure of 3×10-5 Torr and varied oxygen pressures ranging from 1.0×10-4 to 6.0×10-4 Torr. The optical properties of the electro-chromic (EC) film were measured by a spectrophotometer. The optical modulation (ΔT) of the tungsten oxide thin film deposited at an oxygen pressure of 1.0×10-4 Torr was found to be ΔT = 67.46% at λ=550nm. The optimum optical properties for deposition of Ta2O5 were attained at an oxygen pressure of 4x10-4 Torr. Gallium doped zinc oxide (GZO) was used as a conductive layer instead of ITO. A five layer EC device (Glass/GZO/WO3/Ta2O5/NiO/Al) has been design and fabricated.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih-Chao Chan, Chien-Jen Tang, Kun-Hsien Lee, Cheng-Chung Jaing, Chien-Cheng Kuo, Hsi-Chao Chen, and Cheng-Chung Lee "Electro-chromic device with GZO as a conductive layer", Proc. SPIE 7786, Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI, 77860S (19 August 2010); https://doi.org/10.1117/12.860499
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Oxides

Oxygen

Tungsten

Glasses

Ions

Thin films

Transmittance

Back to Top