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Proceedings Article

747 nm Pr:YAP microchip-laser output characteristics

[+] Author Affiliations
Martin Fibrich, Helena Jelínková, Jan Šulc

Czech Technical Univ. in Prague (Czech Republic)

Karel Nejezchleb, Václav Škoda

Crytur Ltd. (Czech Republic)

Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121X (March 03, 2011); doi:10.1117/12.873046
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From Conference Volume 7912

  • Solid State Lasers XX: Technology and Devices
  • W. Andrew Clarkson; Norman Hodgson; Ramesh Shori
  • San Francisco, California, USA | January 22, 2011

abstract

Laser characteristics of Pr:YAlO3 microchip laser operating in the near-infrared spectral region are reported. For active medium pumping, GaN laser diode providing up to 1 W of output power at ~448 nm was employed. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. The continuous-wave output radiation at 747 nm with maximum power of 139 mW has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was 25%.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Martin Fibrich ; Helena Jelínková ; Jan Šulc ; Karel Nejezchleb and Václav Škoda
"747 nm Pr:YAP microchip-laser output characteristics", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121X (March 03, 2011); doi:10.1117/12.873046; http://dx.doi.org/10.1117/12.873046


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