Paper
15 February 2011 High average power Nd:YVO4 regenerative amplifier seeded by a gain switched diode laser
Markus Lührmann, Florian Harth, Christian Theobald, Thorsten Ulm, Ralf Knappe, Achim Nebel, Andreas Klehr, Götz Erbert, Johannes A. L'huillier
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Abstract
We report on a Nd:YVO4 regenerative amplifier (RA), end pumped by 888 nm-diode lasers. The output power was about 46W at repetition rates from 150 to 833kHz with an M2-factor of 1.2. The amplifier was seeded by a gain switched diode laser, generating pulses with a duration of 65 ps and a pulse energy of ≈ 5 pJ. The high gain of the RA of more than 70 dB provides amplified pulse energies as high as 180μJ. Bifurcations of the pulse energy could be avoided. Pulse amplitude fluctuations of only 1.2% for 10,000 consecutive pulses were measured. The long term output power stability of the laboratory setup was 0.3%.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus Lührmann, Florian Harth, Christian Theobald, Thorsten Ulm, Ralf Knappe, Achim Nebel, Andreas Klehr, Götz Erbert, and Johannes A. L'huillier "High average power Nd:YVO4 regenerative amplifier seeded by a gain switched diode laser", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 791210 (15 February 2011); https://doi.org/10.1117/12.874203
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Semiconductor lasers

Diodes

Amplifiers

Neodymium lasers

Picosecond phenomena

Pulsed laser operation

Optical amplifiers

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