Compact intracavity frequency doubled diode laser at 465 nm

Kang Li; N. J. Copner; C. B. E. Gawith; Ian G. Knight; Hans-Ulrich Pfeiffer; Bob Musk

doi:10.1117/12.873588

3 March 2011 Compact intracavity frequency doubled diode laser at 465 nm

Kang Li, N. J. Copner, C. B. E. Gawith, Ian G. Knight, Hans-Ulrich Pfeiffer, Bob Musk

Proceedings Volume 7912, Solid State Lasers XX: Technology and Devices; 791220 (2011) https://doi.org/10.1117/12.873588
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Intra-cavity frequency doubling (ICFD) of an extended cavity 49-emitters edge-emitting laser bar has been demonstrated in a quasi-phase matching MgO-doped periodically poled lithium niobate (MgO: PPLN) bulk crystal. A maximum of 1 W of second-harmonic light at 465 nm is generated at an operating injection current of 45 A with the optimal phase-matching MgO:PPLN temperature of 50.4 °C. To increase the efficiency further, careful design of the lens used on the fast and slow axis beam waists and use of lower-temperature MgO:PPLN planar-waveguide array can be considered.

Citation Download Citation

Kang Li, N. J. Copner, C. B. E. Gawith, Ian G. Knight, Hans-Ulrich Pfeiffer, and Bob Musk "Compact intracavity frequency doubled diode laser at 465 nm", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 791220 (3 March 2011); https://doi.org/10.1117/12.873588

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