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Proceedings Article

Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors

[+] Author Affiliations
Tetyana Konak, Michael Tekavec, Vladimir V. Fedorov, Sergey B. Mirov

The Univ. of Alabama at Birmingham (USA)

Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 791229 (March 03, 2011); doi:10.1117/12.875539
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From Conference Volume 7912

  • Solid State Lasers XX: Technology and Devices
  • W. Andrew Clarkson; Norman Hodgson; Ramesh Shori
  • San Francisco, California, USA | January 22, 2011

abstract

We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at doses of 1.37x108, and 1.28x108 rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope efficiencies, and output powers.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Tetyana Konak ; Michael Tekavec ; Vladimir V. Fedorov and Sergey B. Mirov
"Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 791229 (March 03, 2011); doi:10.1117/12.875539; http://dx.doi.org/10.1117/12.875539


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