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Proceedings Article

Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser

[+] Author Affiliations
J. Rautiainen, J. Nikkinen, O. G. Okhotnikov

Tampere Univ. of Technology (Finland)

I. Krestnikov

Innolume GmbH (Germany)

Proc. SPIE 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, 791702 (February 21, 2011); doi:10.1117/12.873166
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From Conference Volume 7917

  • Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X
  • Konstantin L. Vodopyanov
  • San Francisco, California, USA | January 22, 2011

abstract

We demonstrate a frequency doubled dual-gain quantum dot semiconductor disk laser operating at 590 nm. The reflective gain element, grown by molecular beam epitaxy, has active region composed of 39 layers of InGaAs Stranski- Krastanov quantum dots. The gain mirrors produce individually 3 W and 4 W of output power while the laser with both elements in a single cavity reveals 6 W at 1180 nm with beam quality factor of M2<1.2. The loss induced by the nonlinear crystal is compensated by gain boosting in the dual-gain laser and 2.5 W of output power at 590 nm was achieved after frequency conversion.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

J. Rautiainen ; I. Krestnikov ; J. Nikkinen and O. G. Okhotnikov
"Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser", Proc. SPIE 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, 791702 (February 21, 2011); doi:10.1117/12.873166; http://dx.doi.org/10.1117/12.873166


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