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Proceedings Article

Rigorous optical simulation of light management in crystalline silicon thin film solar cells with rough interface textures

[+] Author Affiliations
Daniel Lockau

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany) and Zuse-Institute Berlin (Germany)

Lin Zschiedrich

JCMwave GmbH (Germany)

Sven Burger, Frank Schmidt

Zuse-Institute Berlin (Germany) and JCMwave GmbH (Germany)

Florian Ruske, Bernd Rech

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)

Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79330M (February 21, 2011); doi:10.1117/12.874967
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From Conference Volume 7933

  • Physics and Simulation of Optoelectronic Devices XIX
  • Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Alexandre Freundlich
  • San Francisco, California | January 22, 2011

abstract

We apply a hybrid finite element / transfer matrix solver to calculate generation rate spectra of thin film silicon solar cells with textured interfaces. Our focus lies on interfaces with statistical rough textures. Due to limited computational domain size the treatment of such textures requires a Monte Carlo sampling of texture representations to obtain a statistical average of integral target quantities. This contribution discusses our choice of synthetic rough interface generation, the Monte Carlo sampling and the need for an incorporation of the cell's substrate into optical simulation when illumination of the cell happens through the substrate. We present results of the numerical characterization and generation rates for a single junction cell layout.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Daniel Lockau ; Lin Zschiedrich ; Sven Burger ; Frank Schmidt ; Florian Ruske, et al.
"Rigorous optical simulation of light management in crystalline silicon thin film solar cells with rough interface textures", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79330M (February 21, 2011); doi:10.1117/12.874967; http://dx.doi.org/10.1117/12.874967


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