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Proceedings Article

Experimental studies of the Franz-Keldysh effect in CVD grown GeSi epi on SOI

[+] Author Affiliations
Ying Luo, John Simons, Joannes Costa, Ivan Shubin, Winnie Chen, Xuezhe Zheng, Guoliang Li, Jin Yao, Hiren Thacker, Keith Goossen, Kannan Raj, Ashok V. Krishnamoorthy, John E. Cunningham

Oracle (USA)

Bill Frans, Mac Robinson

Lawrence Semiconductor Research Lab., Inc. (USA)

Roshanak Shafiiha, Shirong Liao, Ning-Ning Feng, Mehdi Asghari

Kotura, Inc. (USA)

Proc. SPIE 7944, Optoelectronic Interconnects and Component Integration XI, 79440P (January 17, 2011); doi:10.1117/12.876492
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From Conference Volume 7944

  • Optoelectronic Interconnects and Component Integration XI
  • Alexei L. Glebov; Ray T. Chen
  • San Francisco, California | January 22, 2011


Electroabsorption from GeSi on silicon-on-insulator (SOI) is expected to have promising potential for optical modulation due to its low power consumption, small footprint, and more importantly, wide spectral bandwidth for wavelength division multiplexing (WDM) applications. Germanium, as a bulk crystal, has a sharp absorption edge with a strong coefficient at the direct band gap close to the C-band wavelength. Unfortunately, when integrated onto Silicon, or when alloyed with dilute Si for blueshifting to the C-band operation, this strong Franz-Keldysh (FK) effect in bulk Ge is expected to degrade. Here, we report experimental results for GeSi epi when grown under a variety of conditions such as different Si alloy content, under selective versus non selective growth modes for both Silicon and SOI substrates. We compare the measured FK effect to the bulk Ge material. Reduced pressure CVD growth of GeSi heteroepitaxy with various Si content was studied by different characterization tools: X-ray diffraction (XRD), atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS), Hall measurement and optical transmission/absorption to analyze performance for 1550 nm operation. State-of-the-art GeSi epi with low defect density and low root-mean-square (RMS) roughness were fabricated into pin diodes and tested in a surface-normal geometry. They exhibit low dark current density of 5 mA/cm2 at 1V reverse bias with breakdown voltages of 45 Volts. Strong electroabsorption was observed in our GeSi alloy with 0.6% Si content having maximum absorption contrast of Δα/α ~5 at 1580 nm at 75 kV/cm.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Ying Luo ; John Simons ; Joannes Costa ; Ivan Shubin ; Winnie Chen, et al.
"Experimental studies of the Franz-Keldysh effect in CVD grown GeSi epi on SOI", Proc. SPIE 7944, Optoelectronic Interconnects and Component Integration XI, 79440P (January 17, 2011); doi:10.1117/12.876492; http://dx.doi.org/10.1117/12.876492

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