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Proceedings Article

Thermal effect on the I-V characteristics of TiO2 and GaN sol-gel driven Schottky diode

[+] Author Affiliations
Yi Chen, M. Maniruzzaman, Seongcheol Mun, Jaehwan Kim

Inha Univ. (Korea, Republic of)

Proc. SPIE 7980, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2011, 79801E (April 15, 2011); doi:10.1117/12.881823
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From Conference Volume 7980

  • Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2011
  • Vijay K. Varadan
  • San Diego, California, USA | March 06, 2011

abstract

TiO2 and GaN thin film were successfully fabricated on Si substrate by a sol-gel method. However, thin films did not show crystallinity structure without any treatment. To increase the crystallinity of thin films, TiO2 thin films were annealed while GaN was annealed under NH3 gas flow. The annealing temperature range was 700~900°C, and the effects of thermal effect on the structural and electrical properties of TiO2 and GaN films were studied. The resulting films show high crystallinity as indicated via the XRD analysis. As annealing temperature increases up to 900°C, the grain size and the surface roughness increases. Sol-gel thin film driven Schottky diodes are fabricated with Si and Al electrodes, and characterized by measuring their current-voltage behavior with -2~2 V range. TiO2 and GaN Schottky diode with high crytallinity structure show a high forward current.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Yi Chen ; M. Maniruzzaman ; Seongcheol Mun and Jaehwan Kim
"Thermal effect on the I-V characteristics of TiO2 and GaN sol-gel driven Schottky diode", Proc. SPIE 7980, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2011, 79801E (April 15, 2011); doi:10.1117/12.881823; http://dx.doi.org/10.1117/12.881823


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