In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO2-doped SiO2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The deposited films are crystalline with broad peak between 2θ = 20° - 30° corresponding to SiO2 and two strong peak appearing at 2θ = 38.3° and 2θ = 44.6° due to the (004) anatase phase and (210) rutile phase of TiO2. It is also clear from the SEM study that the particle size of films deposited using TEOS are smaller than the one deposited by OMCTS.© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.